STD5NM60-1

STD5NM60-1

厂牌：ST(意法半导体)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049873350

描述：MOSFET N-CH 650V 5A IPAK

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min2.4 S

ConfigurationSingle

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current5 A

Vgs - Gate-Source Voltage- 30 V, + 30 V

Length6.6 mm

Height6.2 mm

KRHTS8541299000

ManufacturerSTMicroelectronics

Typical Turn-On Delay Time14 ns

Minimum Operating Temperature- 55 C

JPHTS8541290100

RoHS Details

CAHTS8541290000

Rds On - Drain-Source Resistance1 Ohms

Transistor Type1 N-Channel

Factory Pack Quantity3000

Typical Turn-Off Delay Time23 ns

Package / CaseTO-251-3

BrandSTMicroelectronics

TARIC8541210000

Maximum Operating Temperature+ 150 C

Width2.4 mm

Mounting StyleThrough Hole

ImageSTMicroelectronics STD5NM60-1

PackagingTube

SubcategoryMOSFETs

Qg - Gate Charge18 nC

Product CategoryMOSFET

DescriptionMOSFET N-Ch 600 Volt 5 Amp

MXHTS85412101

Product TypeMOSFET

SeriesSTD5NM60

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.139332 oz

Fall Time10 ns

CNHTS8541210000

Pd - Power Dissipation96 W

TradenameMDmesh

Vds - Drain-Source Breakdown Voltage600 V

Number of Channels1 Channel

Rise Time10 ns

TypeMOSFET