参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min150 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage2 V
Transistor PolarityN-Channel
Id - Continuous Drain Current80 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height9.15 mm
Length10.4 mm
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
Typical Turn-On Delay Time27 ns
ImageSTMicroelectronics STP80NF55-06
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time125 ns
Maximum Operating Temperature+ 175 C
Package / CaseTO-220-3
Width4.6 mm
PackagingTube
DescriptionMOSFET N-Ch 55 Volt 80 Amp
Mounting StyleThrough Hole
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge142 nC
BrandSTMicroelectronics
RoHS Details
SeriesSTP80NF55-06
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time65 ns
Unit Weight0.011640 oz
Pd - Power Dissipation300 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Rise Time155 ns
TypeMOSFET