参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current120 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time19 ns
Width10.4 mm
Rds On - Drain-Source Resistance3.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time24.5 ns
Length15.75 mm
Height4.6 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge42 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingTube
ProductPower MOSFETs
CNHTS8541290000
BrandSTMicroelectronics
ManufacturerSTMicroelectronics
SeriesSTP160N3LL
Factory Pack Quantity1000
TARIC8541290000
Channel ModeEnhancement
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET LGS LV MOSFET
Fall Time23.4 ns
ImageSTMicroelectronics STP160N3LL
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.011640 oz
USHTS8541290095
Pd - Power Dissipation136 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time91 ns
TypeSTripFET H6