参数项参数值
参数项参数值
Forward Transconductance - Min2.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current2.5 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Length15.75 mm
Height20.15 mm
Typical Turn-On Delay Time24 ns
Minimum Operating Temperature- 55 C
Rds On - Drain-Source Resistance9 Ohms
RoHS Details
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time45 ns
Factory Pack Quantity600
Package / CaseTO-247-3
ImageSTMicroelectronics STW3N150
BrandSTMicroelectronics
Width5.15 mm
Mounting StyleThrough Hole
ManufacturerSTMicroelectronics
Maximum Operating Temperature+ 150 C
PackagingTube
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 1500V 6Ohm 2.5A N-Channel
Qg - Gate Charge29.3 nC
Product TypeMOSFET
SeriesSTW3N150
Channel ModeEnhancement
Unit Weight1.340411 oz
Fall Time61 ns
Pd - Power Dissipation140 W
TradenamePowerMESH
Vds - Drain-Source Breakdown Voltage1.5 kV
Number of Channels1 Channel
Rise Time47 ns