参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3.8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge22 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Factory Pack Quantity1000
CNHTS8541210000
BrandSTMicroelectronics
ManufacturerSTMicroelectronics
SeriesSTF4N62K3
Channel ModeEnhancement
TARIC8541210000
Product CategoryMOSFET
DescriptionMOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
ImageSTMicroelectronics STF4N62K3
Fall Time19 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.011640 oz
USHTS8541290075
Pd - Power Dissipation25 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage620 V
Number of Channels1 Channel
Rise Time9 ns