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ZXTP19100CGTA
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > 双极晶体管
编号：B000049873514
描述：Trans GP BJT PNP 100V 2A 5300mW 4-Pin(3+Tab) SOT-223 T/R
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max500 at - 100 mA, -2 V
Gain Bandwidth Product fT142 MHz
Collector- Base Voltage VCBO- 110 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 100 V
Continuous Collector Current- 2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
Width3.7 mm
Collector-Emitter Saturation Voltage- 130 mV
Height1.65 mm
DC Collector/Base Gain hfe Min20 at - 2 A, - 2 V
MXHTS85412999
Length6.7 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageDiodes Incorporated ZXTP19100CGTA
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
SeriesZXTP191
SubcategoryTransistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.003951 oz
DescriptionBipolar Transistors - BJT PNP 100V 2A
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation5300 mW