参数项参数值
参数项参数值
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current12 A
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current4.5 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage8 mV
DC Collector/Base Gain hfe Min200 at 10 mA, 2 V
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseDFN3020B-8
JPHTS8541290100
CAHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXTNS61
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 20V NPN Low AAT 40V 1A Schottky Dual
ManufacturerDiodes Incorporated
TARIC8541290000
ImageDiodes Incorporated ZXTNS618MCTA
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight1.375685 oz
SubcategoryTransistors
Pd - Power Dissipation1.2 W
USHTS8541290095