参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT190 MHz
Collector- Base Voltage VCBO130 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width2.6 mm
Height1.6 mm
DC Collector/Base Gain hfe Min300 at 10 mA, 2 V, 300 at 1 A, 2 V, 20 at 5 A, 2 V
Length4.6 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity1000
BrandDiodes Incorporated
SeriesZXTN25040
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN 40V HIGH GAIN
ManufacturerDiodes Incorporated
TARIC8541290000
ImageDiodes Incorporated ZXTN25040DZTA
Product CategoryBipolar Transistors - BJT
RoHS Details
SubcategoryTransistors
Pd - Power Dissipation4460 mW
USHTS8541290075