参数项参数值
参数项参数值
Forward Transconductance - Min4.7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current4.6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time4.3 ns
Width6.22 mm
Rds On - Drain-Source Resistance235 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time20 ns
MXHTS85423199
Length6.73 mm
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge16.5 nC
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Maximum Operating Temperature+ 150 C
CNHTS8542319000
ImageDiodes Incorporated ZXMP10A16KTC
TARIC8542319000
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
Channel ModeEnhancement
Fall Time12.1 ns
SeriesZXMP10A
SubcategoryMOSFETs
Factory Pack Quantity2500
Product CategoryMOSFET
BrandDiodes Incorporated
Product TypeMOSFET
Unit Weight0.139332 oz
DescriptionMOSFET P-Chan 100V MOSFET (UMOS)
ManufacturerDiodes Incorporated
USHTS8542310001
Pd - Power Dissipation9.76 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time5.2 ns