参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min4 S
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current3.5 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
Length10.4 mm
JPHTS8541290100
Minimum Operating Temperature- 55 C
Height9.3 mm
CAHTS8541290000
Typical Turn-On Delay Time22.5 ns
Rds On - Drain-Source Resistance3.7 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time51.5 ns
Maximum Operating Temperature+ 150 C
ImageSTMicroelectronics STF5NK100Z
Package / CaseTO-220-3
PackagingTube
Width4.6 mm
SubcategoryMOSFETs
Product CategoryMOSFET
Mounting StyleThrough Hole
TARIC8541210000
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge42 nC
BrandSTMicroelectronics
MXHTS85412101
RoHS Details
SeriesSTF5NK100Z
USHTS8541290095
Channel ModeEnhancement
Fall Time19 ns
Unit Weight0.011640 oz
CNHTS8541210000
Pd - Power Dissipation125 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage1 kV
Number of Channels1 Channel
Rise Time7.7 ns
TypeMOSFET