ZXTN19055DZTA

厂牌：DIODES(美台)

包装：--

类目：元器件 > 分立器件 > 双极晶体管

编号：B000049873577

描述：Trans GP BJT NPN 55V 6A 2100mW 4-Pin(3+Tab) SOT-89 T/R

商品参数

参数项参数值

DC Current Gain hFE Max250

Gain Bandwidth Product fT200 MHz

Collector- Base Voltage VCBO150 V

Maximum DC Collector Current6 A

Collector- Emitter Voltage VCEO Max55 V

ConfigurationSingle

TechnologySi

Transistor PolarityNPN

Emitter- Base Voltage VEBO7 V

Width2.6 mm

Height1.6 mm

DC Collector/Base Gain hfe Min250 at 10 mA, 2 V, 250 at 1 A, 2 V, 180 at 2 A, 2 V, 30 at 6 A, 2 V

Length4.6 mm

MXHTS85412999

KRHTS8541299000

Mounting StyleSMD/SMT

Package / CaseSOT-89-3

JPHTS8541290100

CAHTS8541290000

Maximum Operating Temperature+ 150 C

PackagingCut Tape

PackagingMouseReel

PackagingReel

Minimum Operating Temperature- 55 C

CNHTS8541210000

Factory Pack Quantity1000

BrandDiodes Incorporated

SeriesZXTN190

Product TypeBJTs - Bipolar Transistors

DescriptionBipolar Transistors - BJT 20V NPN HIGH GAIN

ManufacturerDiodes Incorporated

TARIC8541290000

ImageDiodes Incorporated ZXTN19055DZTA

Product CategoryBipolar Transistors - BJT

RoHS Details

SubcategoryTransistors

Pd - Power Dissipation2100 mW

USHTS8541290095