参数项参数值
参数项参数值
DC Current Gain hFE Max180 at 500 mA, 3 V
Gain Bandwidth Product fT70 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current- 3 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Width5.5 mm
Height2.3 mm
DC Collector/Base Gain hfe Min180
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseCPT-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingReel
ImageROHM Semiconductor 2SB1184TLR
SubcategoryTransistors
BrandROHM Semiconductor
Series2SB1184
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Unit Weight0.009185 oz
USHTS8541290095
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP 50V 3A
Pd - Power Dissipation1000 mW
Moisture Sensitivity Level1 (Unlimited)