参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min7.8 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage3 V
Transistor PolarityN-Channel
Id - Continuous Drain Current10 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
JPHTS8541290100
Height16.4 mm
Product CategoryMOSFET
Length10.4 mm
CAHTS8541290000
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time20 ns
ImageSTMicroelectronics STP10NK60ZFP
Rds On - Drain-Source Resistance750 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time55 ns
Maximum Operating Temperature+ 150 C
Package / CaseTO-220-3
Width4.6 mm
PackagingTube
DescriptionMOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH
Mounting StyleThrough Hole
TARIC8541210000
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge70 nC
BrandSTMicroelectronics
RoHS Details
MXHTS85412101
SubcategoryMOSFETs
SeriesSTP10NK60ZFP
USHTS8541290095
Channel ModeEnhancement
Fall Time30 ns
Unit Weight0.071959 oz
CNHTS8541210000
Pd - Power Dissipation35 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time20 ns
TypeMOSFET