参数项参数值
参数项参数值
DC Current Gain hFE Max190 at 10 mA, 2 V
Gain Bandwidth Product fT125 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current5 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current4.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width1.4 mm
Height1 mm
MXHTS85412999
Length3.05 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageDiodes Incorporated ZXTN2031FTA
TARIC8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
RoHS Details
SeriesZXTN2031
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.000282 oz
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation1 W