参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current0.05 A
Collector- Emitter Voltage VCEO Max120 V
Continuous Collector Current50 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.5 V
DC Collector/Base Gain hfe Min180
Width1.25 mm
Height0.8 mm
Length2 mm
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor 2SC4102T106R
RoHS Details
Unit Weight0.000176 oz
Series2SC4102
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation300 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT NPN 120V 50MA
Moisture Sensitivity Level1 (Unlimited)