参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 10 mA, 2 V
Gain Bandwidth Product fT270 MHz
Collector- Base Voltage VCBO45 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO7 V
Width1.3 mm
Height1 mm
DC Collector/Base Gain hfe Min120
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXTP250
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP 40V HG Trans.
ManufacturerDiodes Incorporated
TARIC8541290000
ImageDiodes Incorporated ZXTP25040DFLTA
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000282 oz
SubcategoryTransistors
Pd - Power Dissipation350 mW
USHTS8541290075