参数项参数值
参数项参数值
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max60 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO- 5 V
Width1.75 mm
Height1.3 mm
Length3 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23-6
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Minimum Operating Temperature- 55 C
Factory Pack Quantity3000
CNHTS8541210000
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT Dual 60V NPN/PNP
ImageDiodes Incorporated ZXTD4591E6TA
TARIC8541290000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000229 oz
SubcategoryTransistors
Pd - Power Dissipation1700 mW
USHTS8541290075