参数项参数值
参数项参数值
DC Current Gain hFE Max700
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 120 V
Collector- Emitter Voltage VCEO Max- 120 V
Continuous Collector Current- 100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
DC Collector/Base Gain hfe Min200
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageToshiba 2SA1312GRTE85LF
RoHS Details
Unit Weight0.000988 oz
Series2SA1312
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
BrandToshiba
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT PNP Audio Amp VCEO -120V HFE 700
ManufacturerToshiba