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ZXTD09N50DE6TA
厂牌：DIODES(美台)
包装：--
类目：元器件 > 分立器件 > 双极晶体管
编号：B000049873856
描述：TRANS NPN DUAL LOSAT 50V SOT23-6
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 10 mA, 2 V
Gain Bandwidth Product fT215 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current1 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.8 mm
Collector-Emitter Saturation Voltage160 mV
Height1.3 mm
MXHTS85412999
Length3.1 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-6
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated ZXTD09N50DE6TA
TARIC8541290000
RoHS Details
SeriesZXTD09
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.000229 oz
ManufacturerDiodes Incorporated
DescriptionBipolar Transistors - BJT Dual 50V NPN
USHTS8541290075
Pd - Power Dissipation900 mW