参数项参数值
参数项参数值
Forward Transconductance - Min4 S
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Height2.4 mm
Length6.6 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
ManufacturerSTMicroelectronics
KRHTS8541299000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Typical Turn-On Delay Time10 ns
Factory Pack Quantity2500
BrandSTMicroelectronics
Minimum Operating Temperature- 65 C
JPHTS8541290100
Rds On - Drain-Source Resistance350 mOhms
Maximum Operating Temperature+ 150 C
Transistor Type1 N-Channel
Package / CaseTO-252-3
CAHTS8541290000
SubcategoryMOSFETs
TARIC8541210000
RoHS Details
Product TypeMOSFET
Width6.2 mm
Mounting StyleSMD/SMT
ImageSTMicroelectronics STD7NS20T4
Qg - Gate Charge11.6 nC
DescriptionMOSFET N-Ch 200 Volt 7 Amp
MXHTS85412101
Product CategoryMOSFET
SeriesSTD7NS20
USHTS8541290075
Channel ModeEnhancement
Unit Weight0.139332 oz
Fall Time12 ns
CNHTS8541210000
Pd - Power Dissipation45 W
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time15 ns
TypeMOSFET