SIR182DP-T1-RE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049874145

描述：MOSFET N-CH 60V 0.06A POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.6V; Power Dissipation Pd:69.4W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)

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商品参数

参数项参数值

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage3.6 V

TechnologySi

Id - Continuous Drain Current60 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time15 ns

Rds On - Drain-Source Resistance2.3 mOhms

Typical Turn-Off Delay Time21 ns

MXHTS85411001

Qg - Gate Charge42.2 nC

KRHTS8541109000

Package / CasePowerPAK-SO-8

Mounting StyleSMD/SMT

JPHTS8541100901

Channel ModeEnhancement

Maximum Operating Temperature+ 150 C

Minimum Operating Temperature- 55 C

CAHTS8541100090

Fall Time10 ns

CNHTS8541210000

PackagingCut Tape

PackagingReel

PackagingMouseReel

TARIC8541290000

Pd - Power Dissipation69.4 W

SeriesSIR

ImageVishay / Siliconix SIR182DP-T1-RE3

BrandVishay / Siliconix

Factory Pack Quantity3000

Product TypeMOSFET

SubcategoryMOSFETs

ManufacturerVishay

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Product CategoryMOSFET

Rise Time23 ns

TradenameTrenchFET, PowerPAK

USHTS8541290095

DescriptionMOSFET 60V Vds 20V Vgs PowerPAK SO-8