参数项参数值
参数项参数值
Forward Transconductance - Min300 ms
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Width3.7 mm
Height1.65 mm
Rds On - Drain-Source Resistance1 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time12 ns
MXHTS85412999
Length6.7 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge-
Mounting StyleSMD/SMT
Package / CaseSOT-223-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
ImageDiodes Incorporated ZVN4206GTA
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time15 ns
SeriesZVN4206
Factory Pack Quantity1000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandDiodes Incorporated
Unit Weight0.003951 oz
Product TypeMOSFET
DescriptionMOSFET N-Chnl 60V
ManufacturerDiodes Incorporated
USHTS8541290095
Pd - Power Dissipation2 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time12 ns
TypeFET