参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4.7 mm
Height15.49 mm
Rds On - Drain-Source Resistance1.5 Ohms
MXHTS85412999
Length10.41 mm
KRHTS8541299000
Qg - Gate Charge22 nC
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-220-3
Mounting StyleThrough Hole
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingTube
ImageVishay Semiconductors IRF9620PBF
RoHS Details
Channel ModeEnhancement
SeriesIRF
SubcategoryMOSFETs
BrandVishay Semiconductors
Factory Pack Quantity50
Unit Weight0.211644 oz
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 200V P-CH HEXFET MOSFET
ManufacturerVishay
USHTS8541290095
Pd - Power Dissipation3 W
Number of Channels1 Channel