参数项参数值
参数项参数值
Collector- Emitter Voltage VCEO Max650 V
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage1.8 V
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingTube
ImageSTMicroelectronics STGW40H65DFB
RoHS Details
SeriesSTGW40H65DFB
Factory Pack Quantity600
BrandSTMicroelectronics
Unit Weight1.340411 oz
ManufacturerSTMicroelectronics
Product TypeIGBT Transistors
Continuous Collector Current at 25 C80 A
Product CategoryIGBT Transistors
DescriptionIGBT Transistors 600V 40A trench gate field-stop IGBT
SubcategoryIGBTs
Continuous Collector Current Ic Max40 A