参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityN-Channel
Height9.15 mm
Length10.4 mm
Vgs - Gate-Source Voltage- 25 V, + 25 V
ManufacturerSTMicroelectronics
KRHTS8541299000
Typical Turn-On Delay Time17 ns
PackagingTube
Factory Pack Quantity1000
BrandSTMicroelectronics
Minimum Operating Temperature- 55 C
JPHTS8541290100
Rds On - Drain-Source Resistance4.5 Ohms
Maximum Operating Temperature+ 150 C
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time36 ns
Package / CaseTO-220-3
CAHTS8541290000
SubcategoryMOSFETs
TARIC8541210000
RoHS Details
Width4.6 mm
Product TypeMOSFET
Mounting StyleThrough Hole
ImageSTMicroelectronics STP3NK80Z
Qg - Gate Charge19 nC
DescriptionMOSFET N-Ch 800 Volt 2.5A Zener SuperMESH
MXHTS85412101
SeriesSTP3NK80Z
Product CategoryMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.070548 oz
Fall Time40 ns
CNHTS8541210000
Pd - Power Dissipation70 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time27 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)