参数项参数值
参数项参数值
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width1.4 mm
Collector-Emitter Saturation Voltage0.5 V
Height1 mm
Length3.05 mm
MXHTS85412999
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
SubcategoryTransistors
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageDiodes Incorporated FMMT493ATA
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
SeriesFMMT49
ManufacturerDiodes Incorporated
USHTS8541210075
Unit Weight0.000282 oz
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation500 mW
Moisture Sensitivity Level1 (Unlimited)