参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time23 ns
MXHTS85412999
Rds On - Drain-Source Resistance8.3 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time44 ns
KRHTS8541299000
Qg - Gate Charge56 nC
CNHTS8541290000
Package / CaseLFPAK56-5
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingMouseReel
PackagingReel
PackagingCut Tape
Fall Time14 ns
TARIC8541290000
ImageNexperia PSMN4R0-60YS,115
Factory Pack Quantity1500
BrandNexperia
Unit Weight0.003002 oz
ManufacturerNexperia
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET 60V N-Channel LFPAK Standard Level FET
SubcategoryMOSFETs
Pd - Power Dissipation130 W
Part # Aliases934064465115
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time24 ns