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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min5.3 S
ConfigurationDual
TechnologySi
Id - Continuous Drain Current2.3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance115 mOhms
Transistor Type2 P-Channel
Typical Turn-Off Delay Time18 ns
Width1.6 mm
Height1.1 mm
Length2.9 mm
Qg - Gate Charge7 nC
Package / CaseSSOT-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
Channel ModeEnhancement
Fall Time13 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.001058 oz
BrandON Semiconductor / Fairchild
RoHS Details
SeriesFDC6312P
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDC6312P
Pd - Power Dissipation960 mW
Product CategoryMOSFET
Part # AliasesFDC6312P_NL
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
Vds - Drain-Source Breakdown Voltage20 V
DescriptionMOSFET SSOT-6 P-CH DUAL
TradenamePowerTrench
Number of Channels2 Channel
Rise Time13 ns
TypeMOSFET