参数项参数值
参数项参数值
Forward Transconductance - Min7 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current12 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 16 V, + 16 V
Typical Turn-On Delay Time10 ns
Width2.4 mm
Rds On - Drain-Source Resistance100 MOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20 ns
Length6.6 mm
Height6.2 mm
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge10 nC
Mounting StyleThrough Hole
Package / CaseTO-251-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
PackagingTube
CNHTS8541210000
BrandSTMicroelectronics
Factory Pack Quantity3000
ManufacturerSTMicroelectronics
Channel ModeEnhancement
TARIC8541210000
SeriesSTD12NF06L-1
Product CategoryMOSFET
RoHS Details
DescriptionMOSFET N-Ch 60 Volt 12 Amp
ImageSTMicroelectronics STD12NF06L-1
Fall Time13 ns
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.139332 oz
USHTS8541290095
Pd - Power Dissipation30 W
TradenameSTripFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time35 ns
TypeMOSFET