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商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current300 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance1 Ohms
Transistor Type2 N-Channel MOSFET
Typical Turn-Off Delay Time15 ns
Width1.2 mm
Height0.5 mm
Length1.6 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541210000
ProductMOSFET Small Signal
Channel ModeEnhancement
Fall Time10 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.000106 oz
SeriesEM6K6
ImageROHM Semiconductor EM6K6T2R
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Pd - Power Dissipation150 mW
Part # AliasesEM6K6
Product TypeMOSFET
Factory Pack Quantity8000
Product CategoryMOSFET
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
DescriptionMOSFET Small Signal Dual N-CH 20V .3A .15W
Number of Channels2 Channel
Rise Time10 ns