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SIR158DP-T1-GE3

SIR158DP-T1-GE3

厂牌：VISHAY(威世)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049874428
描述：MOSFET N-CH D-S 30V 8-SOIC
最新价格近期成交17单+
数量价格（含税）
1¥3.2000
100¥2.6778
750¥2.4779
1500¥2.3556
3000¥2.2555
库存：2交期：3-5Days起订：1增量：1
数量：
X
3.2000（单价）
合计：
￥3.20
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current60 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Minimum Operating Temperature- 55 C
Length6.15 mm
Height1.04 mm
JPHTS8541210101
CAHTS8541210000
Rds On - Drain-Source Resistance1.8 mOhms
Package / CasePowerPAK-SO-8
ImageVishay Semiconductors SIR158DP-T1-GE3
RoHS Details
PackagingMouseReel
PackagingReel
PackagingCut Tape
Width5.15 mm
Maximum Operating Temperature+ 150 C
TARIC8541290000
BrandVishay Semiconductors
Mounting StyleSMD/SMT
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay
Factory Pack Quantity3000
Qg - Gate Charge130 nC
MXHTS85412101
SeriesSIR
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.017870 oz
CNHTS8541210000
Part # AliasesSIR158DP-GE3
Pd - Power Dissipation83 W
TradenameTrenchFET, PowerPAK
Number of Channels1 Channel