参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current25 A
KRHTS8541219000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
ImageVishay Semiconductors SI7892BDP-T1-E3
Rds On - Drain-Source Resistance4.2 mOhms
Maximum Operating Temperature+ 150 C
Package / CasePowerPAK-SO-8
PackagingCut Tape
PackagingReel
PackagingMouseReel
DescriptionMOSFET 30V 25A 0.0042Ohm
Mounting StyleSMD/SMT
TARIC8541290000
ManufacturerVishay
BrandVishay Semiconductors
Product TypeMOSFET
Qg - Gate Charge40 nC
Factory Pack Quantity3000
MXHTS85412101
RoHS Details
SubcategoryMOSFETs
SeriesSI7
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.017870 oz
CNHTS8541210000
Part # AliasesSI7892BDP-E3
Pd - Power Dissipation5 W
TradenameTrenchFET
Number of Channels1 Channel