参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current400 mA
KRHTS8541299000
Vgs - Gate-Source Voltage- 30 V, + 30 V
JPHTS8541290100
Height1.65 mm
Length5 mm
CAHTS8541290000
Minimum Operating Temperature- 65 C
ProductMOSFET Small Signal
Typical Turn-On Delay Time6.7 ns
Product CategoryMOSFET
ImageSTMicroelectronics STS1DNC45
Rds On - Drain-Source Resistance4.1 Ohms
Transistor Type2 N-Channel
Maximum Operating Temperature+ 150 C
Package / CaseSOIC-8
PackagingReel
PackagingCut Tape
PackagingMouseReel
DescriptionMOSFET N-Ch 450 Volt 0.4 A
Width4 mm
Mounting StyleSMD/SMT
TARIC8541210000
ManufacturerSTMicroelectronics
Product TypeMOSFET
BrandSTMicroelectronics
Qg - Gate Charge10 nC
Factory Pack Quantity2500
MXHTS85412101
RoHS Details
SeriesSTS1DNC45
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time4 ns
Unit Weight0.002998 oz
CNHTS8541290000
Pd - Power Dissipation2 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage450 V
Number of Channels2 Channel
Rise Time4 ns
TypeMOSFET