参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
ManufacturerSTMicroelectronics
KRHTS8541299000
PackagingTube
Typical Turn-On Delay Time8.5 ns
Factory Pack Quantity1000
BrandSTMicroelectronics
Minimum Operating Temperature- 55 C
JPHTS8541290100
Rds On - Drain-Source Resistance4.2 Ohms
Maximum Operating Temperature+ 150 C
Transistor Type1 N-Channel
Typical Turn-Off Delay Time20.5 ns
Package / CaseTO-220-3
CAHTS8541290000
SubcategoryMOSFETs
TARIC8541290000
RoHS Details
Product TypeMOSFET
Mounting StyleThrough Hole
ImageSTMicroelectronics STF2N95K5
Qg - Gate Charge10 nC
DescriptionMOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected
MXHTS85412999
Product CategoryMOSFET
SeriesSTF2N95K5
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.011640 oz
Fall Time32.5 ns
CNHTS8541290000
Pd - Power Dissipation20 W
TradenameSuperMESH
Vds - Drain-Source Breakdown Voltage950 V
Number of Channels1 Channel
Rise Time13.5 ns