SI4447ADY-T1-GE3

SI4447ADY-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049874506

描述：Trans MOSFET P-CH 40V 7.2A 8-Pin SOIC N T/R

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min14 S

Vgs th - Gate-Source Threshold Voltage1.2 V

TechnologySi

Transistor PolarityP-Channel

Id - Continuous Drain Current7.2 A

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541299000

Minimum Operating Temperature- 55 C

Height1.75 mm

JPHTS8541290100

Typical Turn-On Delay Time7 ns

CAHTS8541290000

Rds On - Drain-Source Resistance45 mOhms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time30 ns

Package / CaseSO-8

RoHS Details

ImageVishay Semiconductors SI4447ADY-T1-GE3

Factory Pack Quantity2500

PackagingMouseReel

PackagingReel

PackagingCut Tape

Maximum Operating Temperature+ 150 C

Width3.9 mm

TARIC8541290000

ManufacturerVishay

BrandVishay Semiconductors

SubcategoryMOSFETs

Mounting StyleSMD/SMT

Product CategoryMOSFET

DescriptionMOSFET -40V Vds 20V Vgs SO-8

Qg - Gate Charge25 nC

MXHTS85412999

SeriesSI4

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.017870 oz

Fall Time9 ns

CNHTS8541290000

Pd - Power Dissipation4.2 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage40 V

Number of Channels1 Channel

Rise Time12 ns