参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Id - Continuous Drain Current100 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time15 ns
Width1.25 mm
Height0.9 mm
Rds On - Drain-Source Resistance8 Ohms
Transistor Type2 N-Channel MOSFET
Typical Turn-Off Delay Time80 ns
MXHTS85412999
Length2 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
CNHTS8541210000
ImageROHM Semiconductor UM6K1NTN
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity3000
Fall Time80 ns
SeriesUM6K1N
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 2N-CH 30V .1A SOT-363
Unit Weight0.000265 oz
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product TypeMOSFET
USHTS8541290095
Part # AliasesUM6K1N
Pd - Power Dissipation150 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time35 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)