SI7119DN-T1-GE3

SI7119DN-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049874561

描述：Trans MOSFET P-CH 200V 1.2A 8-Pin PowerPAK 1212 T/R

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min4 S

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Minimum Operating Temperature- 50 C

Transistor PolarityP-Channel

Id - Continuous Drain Current3.8 A

KRHTS8541299000

JPHTS8541210101

Vgs - Gate-Source Voltage- 20 V, + 20 V

CAHTS8541210000

Length3.3 mm

Height1.04 mm

Typical Turn-On Delay Time9 ns

ImageVishay Semiconductors SI7119DN-T1-GE3

Product CategoryMOSFET

Rds On - Drain-Source Resistance1.05 Ohms

Transistor Type1 P-Channel

Typical Turn-Off Delay Time27 ns

Maximum Operating Temperature+ 150 C

Package / CasePowerPAK-1212-8

DescriptionMOSFET -200V Vds 20V Vgs PowerPAK 1212-8

PackagingMouseReel

PackagingReel

PackagingCut Tape

Width3.3 mm

Mounting StyleSMD/SMT

TARIC8541290000

BrandVishay Semiconductors

Factory Pack Quantity3000

Qg - Gate Charge25 nC

MXHTS85412101

Product TypeMOSFET

SeriesSI7

ManufacturerVishay

RoHS Details

SubcategoryMOSFETs

USHTS8541290095

Channel ModeEnhancement

Fall Time12 ns

Unit Weight0.013065 oz

CNHTS8541290000

Part # AliasesSI7119DN-GE3

Pd - Power Dissipation52 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage200 V

Number of Channels1 Channel

Rise Time11 ns