参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min10 s
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current35 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
Height9.15 mm
CAHTS8541290000
Length10.4 mm
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time15 ns
Product CategoryMOSFET
ImageSTMicroelectronics STP30NF10
Rds On - Drain-Source Resistance38 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
Maximum Operating Temperature+ 175 C
Package / CaseTO-220-3
PackagingTube
DescriptionMOSFET N-Ch 100 Volt 35 Amp
Width4.6 mm
Mounting StyleThrough Hole
TARIC8541210000
ManufacturerSTMicroelectronics
BrandSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge55 nC
Factory Pack Quantity1000
MXHTS85412101
RoHS Details
SubcategoryMOSFETs
SeriesSTP30NF10
USHTS8541290095
Channel ModeEnhancement
Fall Time10 ns
Unit Weight0.050717 oz
CNHTS8541210000
Pd - Power Dissipation115 W
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time40 ns
TypeMOSFET