参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Vgs th - Gate-Source Threshold Voltage3 V
Transistor PolarityN-Channel
Id - Continuous Drain Current26 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
Minimum Operating Temperature- 55 C
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance108 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time109 ns
Maximum Operating Temperature+ 150 C
ImageSTMicroelectronics STF33N60M2
Package / CaseTO-220-3
PackagingTube
Product CategoryMOSFET
DescriptionMOSFET N-CH 600V 0.108Ohm 26A MDmesh M2
Mounting StyleThrough Hole
Factory Pack Quantity1000
ManufacturerSTMicroelectronics
Product TypeMOSFET
Qg - Gate Charge45.5 nC
BrandSTMicroelectronics
RoHS Details
SubcategoryMOSFETs
SeriesSTF33N60M2
Channel ModeEnhancement
Fall Time9 ns
Unit Weight0.011640 oz
Pd - Power Dissipation35 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time9.6 ns