SI1926DL-T1-E3

SI1926DL-T1-E3

厂牌：VISHAY(威世)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000049874658

描述：MOSFET N-CH D-S 60V SC-70-6

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min159 ms

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Id - Continuous Drain Current370 mA

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Height1 mm

Length2.1 mm

KRHTS8541219000

Typical Turn-On Delay Time6.5 ns

ManufacturerVishay

Minimum Operating Temperature- 55 C

JPHTS8541210101

RoHS Details

CAHTS8541210000

Rds On - Drain-Source Resistance1.4 Ohms

Transistor Type2 N-Channel

Typical Turn-Off Delay Time13 ns

Package / CaseSOT-363-6

Factory Pack Quantity3000

BrandVishay Semiconductors

TARIC8541290000

Maximum Operating Temperature+ 150 C

Width1.25 mm

Mounting StyleSMD/SMT

PackagingReel

PackagingCut Tape

PackagingMouseReel

ImageVishay Semiconductors SI1926DL-T1-E3

SubcategoryMOSFETs

Qg - Gate Charge0.9 nC

Product CategoryMOSFET

DescriptionMOSFET 60V Vds 20V Vgs SC70-6

Product TypeMOSFET

MXHTS85412101

SeriesSI1

USHTS8541210095

Channel ModeEnhancement

Unit Weight0.000265 oz

Fall Time14 ns

CNHTS8541210000

Part # AliasesSI1926DL-E3

Pd - Power Dissipation510 mW

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels2 Channel

Rise Time12 ns