参数项参数值
参数项参数值
Forward Transconductance - Min0.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Width1.25 mm
Rds On - Drain-Source Resistance1.6 Ohms
Transistor Type1 P-Channel
Height0.8 mm
Typical Turn-Off Delay Time30 ns
Length2 mm
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
RoHS Details
ImageROHM Semiconductor RSU002P03T106
PackagingMouseReel
PackagingReel
PackagingCut Tape
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time5 ns
ManufacturerROHM Semiconductor
SeriesRSU002P03
Unit Weight0.000176 oz
Product CategoryMOSFET
Factory Pack Quantity3000
Product TypeMOSFET
DescriptionMOSFET P-CH 30V 200MA SOT-323
Part # AliasesRSU002P03
Pd - Power Dissipation200 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time5 ns
TypeMOSFET
Moisture Sensitivity Level1 (Unlimited)