参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO160 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max140 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Width2.41 mm
Collector-Emitter Saturation Voltage0.7 V
Height4.01 mm
MXHTS85412101
KRHTS8541219000
Mounting StyleThrough Hole
Package / CaseTO-92-3
JPHTS8541210101
CAHTS8541210000
PackagingAmmo Pack
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
Factory Pack Quantity2000
BrandDiodes Incorporated
SeriesZTX455
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN High Voltage
ImageDiodes Incorporated ZTX455STZ
TARIC8541210000
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.016000 oz
SubcategoryTransistors
Pd - Power Dissipation1 W
USHTS8541210095