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BSC057N08NS3G
厂牌：Infineon(英飞凌)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049874764
描述：MOSFET N-CH 80V 100A TDSON-8
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min40 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time16 ns
Rds On - Drain-Source Resistance4.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Width5.15 mm
Height1.27 mm
Length5.9 mm
MXHTS85412999
Qg - Gate Charge56 nC
KRHTS8541299000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time9 ns
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.003527 oz
RoHS Details
BrandInfineon Technologies
ImageInfineon Technologies BSC057N08NS3 G
Product TypeMOSFET
SubcategoryMOSFETs
Factory Pack Quantity5000
Vds - Drain-Source Breakdown Voltage80 V
ManufacturerInfineon
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
Rise Time14 ns
DescriptionMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
TypeOptiMOS 3 Power-Transistor