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STD4NK60Z-1
厂牌：ST(意法半导体)
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000049874780
描述：MOSFET N-CH 600V 4A IPAK
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time12 ns
Rds On - Drain-Source Resistance2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
Width2.4 mm
Height6.2 mm
Length6.6 mm
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge26 nC
Package / CaseTO-251-3
Mounting StyleThrough Hole
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time16.5 ns
PackagingTube
TARIC8541210000
ImageSTMicroelectronics STD4NK60Z-1
Unit Weight0.014110 oz
SeriesSTD4NK60Z-1
BrandSTMicroelectronics
Pd - Power Dissipation70 W
Factory Pack Quantity3000
Product TypeMOSFET
ManufacturerSTMicroelectronics
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290075
TradenameSuperMESH
Number of Channels1 Channel
Rise Time9.5 ns