参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current75 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width4.4 mm
Height15.65 mm
Rds On - Drain-Source Resistance11 mOhms
Transistor Type1 N-Channel
MXHTS85412999
Length10 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleThrough Hole
Qg - Gate Charge110 nC
Package / CaseTO-220-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
ImageInfineon / IR IRFB4710PBF
PackagingTube
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity1000
SubcategoryMOSFETs
BrandInfineon / IR
Product CategoryMOSFET
Unit Weight0.211644 oz
DescriptionMOSFET MOSFT 100V 75A 14mOhm 110nC
ManufacturerInfineon
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel