参数项参数值
参数项参数值
DC Current Gain hFE Max25 at 1 mA, 10 V
Gain Bandwidth Product fT50 MHz
Collector- Base Voltage VCBO- 300 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max- 300 V
Continuous Collector Current- 0.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.5 V
DC Collector/Base Gain hfe Min25 at 1 mA, 10 V, 40 at 10 mA, 10 V, 25 at 30 mA, 10 V
Width1.4 mm
Height1 mm
Length3.05 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.000282 oz
SeriesFMMTA
ImageDiodes Incorporated FMMTA92TA
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Pd - Power Dissipation330 mW
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
USHTS8541290095
DescriptionBipolar Transistors - BJT PNP High Voltage