SIS407ADN-T1-GE3

SIS407ADN-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049875072

描述：Trans MOSFET P-CH 20V 16.7A 8-Pin PowerPAK 1212 T/R

商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min70 S

Vgs th - Gate-Source Threshold Voltage400 mV

TechnologySi

Minimum Operating Temperature- 55 C

Transistor PolarityP-Channel

Id - Continuous Drain Current18 A

KRHTS8541299000

JPHTS8541290100

Vgs - Gate-Source Voltage- 8 V, + 8 V

CAHTS8541290000

Length3.3 mm

Height1.04 mm

Typical Turn-On Delay Time12 ns

ImageVishay Semiconductors SIS407ADN-T1-GE3

Product CategoryMOSFET

Transistor Type1 P-Channel

Typical Turn-Off Delay Time120 ns

Maximum Operating Temperature+ 150 C

Package / CasePowerPAK-1212-8

DescriptionMOSFET -20V Vds 8V Vgs PowerPAK 1212-8

PackagingCut Tape

PackagingMouseReel

PackagingReel

Width3.3 mm

Mounting StyleSMD/SMT

TARIC8541290000

BrandVishay Semiconductors

Factory Pack Quantity3000

Qg - Gate Charge112 nC

MXHTS85412999

Product TypeMOSFET

SeriesSIS

ManufacturerVishay

RoHS Details

SubcategoryMOSFETs

USHTS8541290095

Channel ModeEnhancement

Fall Time36 ns

Unit Weight0.028959 oz

CNHTS8541290000

Pd - Power Dissipation39.1 W

TradenameTrenchFET, PowerPAK

Vds - Drain-Source Breakdown Voltage20 V

Number of Channels1 Channel

Rise Time4 ns