STL7N60M2

厂牌:ST(意法半导体)
包装:--
类目:元器件 > 分立器件 > MOSFET
编号:B000049875075
描述:场效应管(MOSFET) 4W 600V 5A 1个N沟道
最新价格近期成交39单+
数量价格(含税)
1¥3.4111
100¥2.7334
750¥2.4333
1500¥2.3000
3000¥2.1889
库存:23交期:3-5Days起订:1增量:1
数量:
X
3.4111(单价)
合计:
¥3.41
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current5 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time7.6 nS
Minimum Operating Temperature- 55 C
ManufacturerSTMicroelectronics
Factory Pack Quantity3000
Rds On - Drain-Source Resistance1.05 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19.3 ns
Package / CasePowerFLAT-5x5-12
BrandSTMicroelectronics
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageSTMicroelectronics STL7N60M2
Qg - Gate Charge8.8 nC
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET PTD HIGH VOLTAGE
Product TypeMOSFET
SeriesSTL7N60M2
Channel ModeEnhancement
Unit Weight0.002751 oz
Fall Time15.9 ns
Pd - Power Dissipation67 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time7.2 ns