参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current5 A
Vgs - Gate-Source Voltage- 25 V, + 25 V
Typical Turn-On Delay Time7.6 nS
Minimum Operating Temperature- 55 C
ManufacturerSTMicroelectronics
Factory Pack Quantity3000
Rds On - Drain-Source Resistance1.05 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19.3 ns
Package / CasePowerFLAT-5x5-12
BrandSTMicroelectronics
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
RoHS Details
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageSTMicroelectronics STL7N60M2
Qg - Gate Charge8.8 nC
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET PTD HIGH VOLTAGE
Product TypeMOSFET
SeriesSTL7N60M2
Channel ModeEnhancement
Unit Weight0.002751 oz
Fall Time15.9 ns
Pd - Power Dissipation67 W
TradenameMDmesh
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time7.2 ns