参数项参数值
参数项参数值
Forward Transconductance - Min7.7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.75 V
TechnologySi
Id - Continuous Drain Current8.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time22 ns
Rds On - Drain-Source Resistance850 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time46 ns
Width4.6 mm
Height9.3 mm
Length10.4 mm
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge64 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time19 ns
PackagingTube
TARIC8541210000
ImageSTMicroelectronics STP10NK70ZFP
Unit Weight0.011640 oz
SeriesSTP10NK70ZFP
Factory Pack Quantity1000
BrandSTMicroelectronics
Pd - Power Dissipation35 W
Product TypeMOSFET
Product CategoryMOSFET
ManufacturerSTMicroelectronics
SubcategoryMOSFETs
DescriptionMOSFET N-Ch, 700V-0.75ohms Zener SuperMESH 8.6A
Vds - Drain-Source Breakdown Voltage700 V
USHTS8541290095
TradenameSuperMESH
Number of Channels1 Channel
Rise Time19 ns