SI1416EDH-T1-GE3

SI1416EDH-T1-GE3

厂牌：VISHAY(威世)

包装：--

类目：元器件 > 分立器件 > MOSFET

编号：B000049875092

描述：MOSFET 30V Vds 12V Vgs SC70-6

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min13 S

Vgs th - Gate-Source Threshold Voltage600 mV

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current3.9 A

Vgs - Gate-Source Voltage- 12 V, + 12 V

KRHTS8541299000

Minimum Operating Temperature- 55 C

JPHTS8541290100

Typical Turn-On Delay Time1.5 ns

CAHTS8541290000

Rds On - Drain-Source Resistance58 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time15 ns

RoHS Details

Package / CaseSOT-363-6

ImageVishay Semiconductors SI1416EDH-T1-GE3

Factory Pack Quantity3000

PackagingMouseReel

PackagingCut Tape

PackagingReel

Maximum Operating Temperature+ 150 C

TARIC8541290000

BrandVishay Semiconductors

SubcategoryMOSFETs

Mounting StyleSMD/SMT

Product CategoryMOSFET

ManufacturerVishay

DescriptionMOSFET 30V Vds 12V Vgs SC70-6

Qg - Gate Charge12 nC

MXHTS85412999

SeriesSI1

Product TypeMOSFET

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.000988 oz

Fall Time50 ns

CNHTS8541290000

Part # AliasesSI1410EDH-T1-E3-S SI1410EDH-T1-GE3 SI1426DH-T1-E3-S

Pd - Power Dissipation2.8 W

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time30 ns

Moisture Sensitivity Level1 (Unlimited)